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| TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCER VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg Symbol RJC 2N6352 2N6353 W W 0 C 2N6350, 2N6351 TO-33* 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Applies for tp 10 ms, Duty cycle 50% 2) Derate linearly @ 5.72 mW/0C above TA > 250C 3) Derate linearly @ 50 mW/0C above TC > 1000C 4) Derate linearly @ 11.4 mW/0C above TA > 250C 5) Derate linearly @ 250 mW/0C above TC > 1000C 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2 k, RB2E = 100 2N6350, 2N6352 2N6351, 2N6353 V(BR)CER 80 150 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Breakdown Voltage IEB = 12 mAdc, Base 1 Open IEB = 12 mAdc, Base 2 Open Collector-Emitter Cutoff Current VEB1 = 2.0 Vdc, RB2E = 100 , VCE = 80 Vdc VEB1 = 2.0 Vdc, RB2E = 100 , VCE = 150 Vdc Symbol V(BR)EBO Min. 6.0 12 Max. Unit Vdc 2N6350, 2N6352 2N6351, 2N6353 ICEX 1.0 1.0 Adc ON CHARACTERISTICS (6) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Collector-Emitter Saturation Voltage IC = 5.0 Adc, RB2E = 100 , IB1 = 5.0 mAdc IC = 5.0 Adc, RB2E = 100 , IB1 = 10 mAdc Base-Emitter Voltage IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 2N6350, 2N6352 hFE 2,000 2,000 400 1,000 1,000 200 VCE(sat) 10,000 2N6351, 2N6353 10,000 2N6350, 2N6352 2N6351, 2N6353 1.5 2.5 2.5 Vdc VBE1(on) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 ; f = 10 MHz Output Capacitance VCB1 = 10 Vdc, 100 kHz f 1.0 MHz, Base 2 Open hfe 5.0 Cobo 25 120 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) t on 0.5 s s t off 1.2 SAFE OPERATING AREA DC Tests TC = +1000C, 1 Cycle, t 1.0 s, tr + tf = 10 s, RB2E = 100 (See fig 6 for 2N6350, 2N6351) Test 1 VCE = 1.5Vdc, IC = 3.3 Adc 2N6350, 2N6351 Test 2 VCE = 30 Vdc, IC = 167 mAdc 2N6350, 2N6351 Test 3 VCE = 80 Vdc, IC = 35 mAdc 2N6350 Test 4 VCE = 150 Vdc, IC = 13 mAdc 2N6351 TC = +1000C, 1 Cycle, t 1.0 s, tr + tf = 10 s, RB2E = 100 (See fig 7 for 2N6352, 2N6353) Test 1 VCE = 5.0Vdc, IC = 5.0 Adc 2N6352, 2N6353 Test 2 VCE = 10 Vdc, IC = 2.5 Adc 2N6352, 2N6353 Test 3 VCE = 80 Vdc, IC = 95 mAdc 2N6352 Test 4 VCE = 150 Vdc, IC = 35 mAdc 2N6353 (6) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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